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High Power Rectifier Diode 1N4756A , Silicon Planar Zener Diodes

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Title: High Power Rectifier Diode 1N4756A , Silicon Planar Zener Diodes 
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Quantity: Negotiable
Delivery date: Since the payment date Days delivery

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High Power Rectifier Diode 1N4756A , Silicon Planar Zener Diodes

 

 

Features

 

• Glass package DO-41 structure ensures high reliability.

• Wide spectrum from 3.3 V through 36 V of zener voltage provide flexible application.

 

 

Ordering Information

Part No. Cathode Band Mark Package Name Package Code
1N4756A Black Part No. DO-41 GRZZ0002ZA-A

 

 

Absolute Maximum Ratings

                                                                                                                            (Ta = 25°C)

Item Symbol Value Unit
Power dissipation Pd 1.0 W
Junction temperature Tj 200 °C
Storage temperature Tstg -65 to +200 °C

 

 


High Power Rectifier Diode 1N4756A , Silicon Planar Zener Diodes
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