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IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer

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Title： IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer 
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IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer

 

 

 

2SK3797 Field Effect Transistor Silicon N-Channel MOS Type  

 

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.)

• High forward transfer admittance: |Yfs| = 7.5 S (typ.)

• Low leakage current: IDSS = 100 μA (VDS = 600 V)

• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

Maximum Ratings (Ta = 25°C)

 

Characteristic Symbol Rating Unit
Drain-source voltage VDSS 600 V
Drain-gate voltage (RGS = 20 k) VDGR 600 V
Gate-source voltage VGSS ±30 V

Drain current                DC

                                  Pulse (t = 1 ms)

 ID 13 A
IDP 52
Drain power dissipation (Tc = 25°C) PD 50 W
Single pulse avalanche energy EAS 1033 mJ
Avalanche current AR 13 A
Repetitive avalanche energy EAR 5.0 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -50-150     °C

 

Thermal Characteristics

Characteristic Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 2.5 w/ °C
Thermal resistance, channel to abinent Rth (ch-a)
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